摘要 |
<p>PURPOSE:To obtain a current sensor which is excellent in both sensitivity and temperature characteristic, by using Cd1-xMnxTe as a Faraday rotary element. CONSTITUTION:A Cd1-xMnxTe single crystal chip 1 is placed in a place where a magnetic field exists, and used as a Faraday rotary element which can rotate the polarization plane of light. To one face of the single crystal chip 1, a polarization film 2 is vapor-deposited or stuck. On both faces of the single crystal chip 1, two pieces of optical fibers 4, 5 are provided so as to be opposed to each other. To the incident end face of the optical fiber 5 of the light receiving side, an analyzing film 3 is vapor-deposited or stuck. In this case, the polarization film 2 and the analyzing film are the multilayer films of a metallic dielectric, and obtained by laminating alternately and repeatedly a dielectric body (thickness d) being transparent against light, and a thinner metallic layer (thickness g).</p> |