| 摘要 |
PURPOSE: To obtain the device which can be operated at high frequencies without the adverse effect on the power gain of a transistor, by providing a transistor chip, a collector island part, an emitter lead and a collector lead and a collector contact bar. CONSTITUTION: In the layout of a transistor used in a high-frequency power gain circuit, a transistor chip 46 having a base, an emitter and a collector and a collector island part 70, which is connected to the collector of the transistor chip 46, are provided. Furthermore, an emitter lead 42 and a collector lead 44, and a collector contact bar 54, which is connected to the collector island part 70, are provided. For example, the emitter lead 42 is connected to a MOS capacitor 48 and the transistor chip 46 through an emitter bonding wire 56. Furthermore, an output MOS capacitor 68 is directly mounted on the collector island part 70. |
