发明名称 Protection circuit for IC
摘要 The protection circuit has a semiconductor structure incorporating a number of pnp regions (I,II,...), with one of their p regions (13) coupled together and connected to one of the voltage supply terminals (1) for the IC. Similarly the other p regions (14) are coupled together and connected to the opposite voltage supply terminal for the IC. Pref. the pnp regions are formed as lateral pnp bipolar transistors within a semiconductor body having a p-- substrate (10) and an overlying n- layer (12), incorporating both the p-regions.
申请公布号 DE19640224(C1) 申请公布日期 1997.12.04
申请号 DE19961040224 申请日期 1996.09.30
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 TIHANYI, JENOE, DR., 85551 KIRCHHEIM, DE;ZIERHUT, HERMANN, 81739 MUENCHEN, DE;BICHLER, HELMUT, 82166 GRAEFELFING, DE
分类号 H01L27/02;(IPC1-7):H01L23/62;H01L23/60 主分类号 H01L27/02
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