| 摘要 |
PROBLEM TO BE SOLVED: To reduce uneven illuminance on a substrate exposed to light, by setting the relative width in the scanning direction of the projected image of the substrate exposed to light in the illumination region on a mask to a value equal to an integral multiple of the distance that the substrate exposed to light is moved in the direction of scanning for one period of the pulse light emission of a pulse light source. SOLUTION: With the arcuate illumination region 46 on a reticle 12 illuminated with pulse laser light IL, the reticle 12 is scanned at a constant speed in the z direction through a drive 24 and a reticle stage 20. The image of the pattern of the reticle 12 inside the illumination region 46 is formed and projected on the exposure region 46P on the wafer 15 conjugate with the illumination region 46. The distance that a wafer 15 is scanned in the DW direction (x direction) for one period of the pulse light emission of a pulse laser light source 16 is taken asΔL. In this case the widthβL of the exposure region 46P in the DW direction, or the direction of scanning, is set to a value equal to an integral multiple of the distanceΔL.
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