| 摘要 |
A high voltage semiconductor device comprises two terminals (9, 10) on opposite sides of and interconnected by a solid layer comprising at least a first diamond layer (6, 7, 8), said device being able to block a voltage for at least one direction of a voltage applied across its terminals (9, 10, 15, 16). At least a surface portion (11) of the diamond layer between the terminals is terminated, the termination being such that the Fermi level at said surface portion is at least 0.3 eV above the valence band and at least 0.3 eV below the conduction band, said surface portion (11) surrounding the device between the terminals. |
