METHOD FOR FORMING METAL WIRE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming metal wire of semiconductor device is provided to improve a reliability of a device by exposing a table top formed on an upper portion of a metal wire and removing the exposed table top in a transient etching process. CONSTITUTION: An intermetalic dielectrics(IMD)(32) is formed on a substrate(31). Barrier metal layers(33), an aluminum layers(34) for a metal wire, and an anti reflection layer(35) are successively formed. The anti reflection layer(35) and the aluminum layer(34) for a metal wire are successively etched through a main etching process. A polymer(37) is formed on both side wall of the aluminum layer(34) for a metal wire. A table top is generated on the polymer(37). An oxidation film(38) is formed on the all structure through a high density plasma chemical vapor deposition and is used as a protection film.