| 摘要 |
PURPOSE: A method for manufacturing a laser diode is provided to be easily manufactured compared to a prior art by means of a single-step liquid phase epitaxial method using AlzGa1-zAs(z≧0.2) current confinement layer and a melt-etching and regrowth technology. CONSTITUTION: A method for manufacturing a laser diode forms two projections separated by a given distance on a p+-GaAs substrate(21). An AlzGa1-zAs current confinement layer(22) is grown on the substrate(21) by means of liquid phase epitaxial method. Two channels are formed in the two projection regions formed on the substrate(21) using melt-etching of the liquid phase epitaxial method, so that a mesa structure is formed between the channels. A p-AlGaAs lower clad layer(23), a p-AlGaAs active layer(24), an n-AlGaAs upper clad layer(25) and a n+-GaAs contact layer(26) are sequentially formed. N- and p- resistor metal electrodes(27,28) are deposited below the substrate(21) and on the contact layer(26).
|
