| 摘要 |
PURPOSE: A pin assignment method of a semiconductor memory device and a semiconductor memory device receiving a signal in packet unit as an input are provided to separate an address input pin and a data input pin in a direct address mode testing a memory part operating in a packet unit. CONSTITUTION: The pins of the semiconductor memory device includes data pins(DQA<8:0>,DQB<8:0>) assigned to input/output data in a normal mode. Request pins(RQ<7:0>) are assigned to input an address and a command. Clock pins(CFM/CFMN,CTM/CTMN) are assigned to input a clock, and there are also four pins(CLIN,CLOUT,SIN,SOUT). A dual clock with 180 deg. phase difference is inputted to the clock pins. The data pins in a normal mode are assigned to test data pins(TestDQA<8:0>,TestDQB<8:0>) in the direct access mode and are assigned to data bus signals(RWDA<8:0>,RWDB<8:0>) as a core interface signal operating the memory part. And, signals controlling the memory part in the normal mode and the request pins and a clock pin(CTM) and other pins(CLOUT,SIN,SOUT) ae assigned in the direct access mode, and a row address(RADR) and a column address(CADR) and a precharge bank address(PBSEL) and a column bank address(CBSEL) are assigned to test address pins(TestA<11:0>). The clock pins except the clock pin(CTM) in the normal mode are assigned respectively to a test write pin(TestWrite) and a test row address strobe pin(TestRASb) and a test column address strobe pin(TestCASb) in the direct access mode. A write signal(RWRITE) discriminating read/write of data is inputted to the test write pin, and a row address active/precharge signal(BSENSE/PRECH) to activate/precharge the row address is inputted to the test row address strobe pin. And, a column address active/precharge signal(COLCYC/COLLAT) to activate/precharge the column address is inputted to the test column address strobe pin.
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