发明名称 |
Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon |
摘要 |
A method of growing atomically-flat surfaces and high quality low-defect crystal films of semiconductor materials and fabricating improved devices thereon. The method is also suitable for growing films heteroepitaxially on substrates that are different than the film. The method is particularly suited for growth of elemental semiconductors (such as Si), compounds of Groups III and V elements of the Periodic Table (such as GaN), and compounds and alloys of Group IV elements of the Periodic Table (such as SiC).
|
申请公布号 |
US6165874(A) |
申请公布日期 |
2000.12.26 |
申请号 |
US19980252623 |
申请日期 |
1998.12.16 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
发明人 |
POWELL, J. ANTHONY;LARKIN, DAVID J.;NEUDECK, PHILIP G.;MATUS, LAWRENCE G. |
分类号 |
C30B25/02;C30B25/18;H01L21/20;H01L33/00;(IPC1-7):H01L21/306 |
主分类号 |
C30B25/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|