| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for depositing a high-quality oxide ceramic thin film on metal by using a high-temperature plasma containing oxygen. SOLUTION: An oxide ceramic thin film 7 is deposited on a Pt layer 4 by changing at least the oxygen flow rate in a deposition process, and to be concrete, by decreasing the oxygen flow rate in the initial stage of deposition and then increasing the above oxygen flow rate discontinuously or continuously; or an oxide ceramics thin film 27 is deposited on a Pt layer 24 by changing high-frequency input power in a deposition process, and to be concrete, by decreasing high-frequency input power in the initial stage of deposition and increasing the above high-frequency input power discontinuously or continuously. |
