| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device in which a forming region of bump electrodes can be ensured by a large amount. SOLUTION: This semiconductor device is provided with an interposer substrate 1, where a recessed part 3 is installed and a desired conducting layer 2 and bump pads 4 are formed, first bump electrodes 5 which are connected electrically with the bump pads 4 on an upper surface of the interposer substrate 1, IC chips 6 which are accommodated, being arranged on a bottom surface of the recessed part 3 of the interposer substrate 1 and connected electrically with the conducting layer 2 of the interposer substrate 1, a retainer 8 which is arranged being retained by the interposer substrate 1, at a prescribed interval above the IC chips 6 in the recessed part 3 of the interposer substrate 1, and second bump electrodes 13 formed on an upper surface of the retainer 8.
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