发明名称 |
HEAT TREATMENT DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment device where treatment gas supply quantity on a substrate at the time of heat treatment is uniformed and the film thickness distribution of the substrate is uniformed. SOLUTION: In the heat treatment device, a shower plate 30 for introducing treatment gas into a treatment chamber in a shower shape is installed above the substrate W in the treatment chamber. In the shower plate 30, a plurality of gas introduction holes 31 are arranged so that they have n-times rotary symmetry (n is the natural number of two or above) with a prescribed symmetric axis As vertical to the substrate W as a center. The symmetric axis As and a rotary axis Ar when the substrate W is rotated are shifted in a direction parallel to the rotary face of the substrate W. The shift distance D2 is set to a range between one fifth of the shortest adjacent interval D1 between the gas introduction holes 31 and half of it.
|
申请公布号 |
JP2002261036(A) |
申请公布日期 |
2002.09.13 |
申请号 |
JP20010054541 |
申请日期 |
2001.02.28 |
申请人 |
DAINIPPON SCREEN MFG CO LTD |
发明人 |
ITO SADAAKI;TAKAHASHI MITSUKAZU;TERAJIMA KOZO |
分类号 |
C23C14/02;C23C16/02;H01L21/26;H01L21/31;(IPC1-7):H01L21/26 |
主分类号 |
C23C14/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|