发明名称 HEAT TREATMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment device where treatment gas supply quantity on a substrate at the time of heat treatment is uniformed and the film thickness distribution of the substrate is uniformed. SOLUTION: In the heat treatment device, a shower plate 30 for introducing treatment gas into a treatment chamber in a shower shape is installed above the substrate W in the treatment chamber. In the shower plate 30, a plurality of gas introduction holes 31 are arranged so that they have n-times rotary symmetry (n is the natural number of two or above) with a prescribed symmetric axis As vertical to the substrate W as a center. The symmetric axis As and a rotary axis Ar when the substrate W is rotated are shifted in a direction parallel to the rotary face of the substrate W. The shift distance D2 is set to a range between one fifth of the shortest adjacent interval D1 between the gas introduction holes 31 and half of it.
申请公布号 JP2002261036(A) 申请公布日期 2002.09.13
申请号 JP20010054541 申请日期 2001.02.28
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 ITO SADAAKI;TAKAHASHI MITSUKAZU;TERAJIMA KOZO
分类号 C23C14/02;C23C16/02;H01L21/26;H01L21/31;(IPC1-7):H01L21/26 主分类号 C23C14/02
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