AMORPHOUS INDIUM THIN OXIDE ETCHING SOLUTION

摘要

PURPOSE: An amorphous indium thin oxide etching solution is provided not to etch Mo or Mo alloy for source, drain and data lines even when pin holes are formed in a passivation film, thereby preventing the deterioration of the characteristics. CONSTITUTION: An amorphous indium thin oxide etching solution is to carry out the patterning of amorphous indium thin oxide electrodes(8) with an aqueous solution in which HCL and CH3COOH are mixed at a ratio of 1-10%, preferably 3-10%, and 5% in the actual production.