发明名称
摘要 <p>PROBLEM TO BE SOLVED: To provide a liquid crystal display panel using an insulated-gate type field effect semiconductor device, which is good in switching characteristic, and can be used at high frequency. SOLUTION: A non-single crystal semiconductor region 2 comprising a source region, a drain region and a channel formation region is formed on an insulating surface of a substrate 1 consisting of a quartz film, a glass film or an organic film, a gate insulating film 3 coming into contact with the channel formation region is provided on the semiconductor region 2, and a electrode 4 which comes into contact with film 3 is provided on the film 3. Moreover, with a resin layer consisting of a polyimide provided on the gate electrode, an electrode connected electrically with the source region or the drain region in a hole provided in the resin layer is provided on the resin layer.</p>
申请公布号 JP3401533(B2) 申请公布日期 2003.04.28
申请号 JP19990167563 申请日期 1999.06.14
申请人 发明人
分类号 G02F1/1368;G02F1/1333;G02F1/136;G02F1/1365;G09F9/30;H01L21/20;H01L29/786;(IPC1-7):H01L29/786 主分类号 G02F1/1368
代理机构 代理人
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