发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH STORAGE NODE CONTACT PLUG USED AS RESISTOR STRUCTURE FOR OBTAINING SECURELY PREDETERMINED SHAPE AND STABLE ELECTRICAL RESISTANCE |
摘要 |
PURPOSE: A method of manufacturing a semiconductor device is provided to obtain securely a predetermined shape and a stable electrical resistance from a resistor structure by using a storage node contact plug as the resistor structure. CONSTITUTION: A semiconductor substrate(100) includes a cell array region(C) and a peripheral region(D). Landing pads(130) are formed on the substrate within the cell array region. A pad interlayer dielectric(135) is formed thereon. Bit line structures(150) and at least one bit line pattern(153) are formed on the pad interlayer dielectric within the cell array region and the peripheral region, respectively. The bit line structure of the cell array region and the bit line pattern of the peripheral region are composed of a bit line(140) and a bit line capping pattern(145). A bit line interlayer dielectric(160) is formed thereon. A plurality of BC contact holes for exposing the landing pads to the outside are formed within the cell array region and a plurality of resistor contact holes(168) for exposing the bit line pattern to the outside are simultaneously formed within the peripheral region. Storage node contact plugs(170) are filled in the BC contact holes and the resistor contact holes, respectively.
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申请公布号 |
KR20040108501(A) |
申请公布日期 |
2004.12.24 |
申请号 |
KR20030039242 |
申请日期 |
2003.06.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN, TAE HYEOK;SEO, JEONG U |
分类号 |
H01L21/8239;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8239 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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