发明名称 |
Selective channel implantation for forming semiconductor devices with different threshold voltages |
摘要 |
Multiple semiconductor devices are formed with different threshold voltages. According to one exemplary implementation, first and second semiconductor devices are formed and doped differently, resulting in different threshold voltages for the first and second semiconductor devices.
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申请公布号 |
US7262104(B1) |
申请公布日期 |
2007.08.28 |
申请号 |
US20040857931 |
申请日期 |
2004.06.02 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WANG HAIHONG;AHMED SHIBLY S.;YU BIN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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