| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of mitigating electric field convergence in a terminal end region and raising pressure resistance in the terminal end region. SOLUTION: An n-type epitaxial layer 12 is lower in impurity concentration and higher in resistance than a silicon substrate 11, and is formed by the thickness of 3-4μm on the silicon substrate 11. A p-type column layer 13 forming a superjunction structure is formed on the n-type epitaxial layer 12, and a p-type base layer 14 is formed on the column layer 13. A terminal end layer 21 larger in junction depth than the p-type base layer 14 is formed in the terminal end region. COPYRIGHT: (C)2007,JPO&INPIT
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