| 摘要 |
PROBLEM TO BE SOLVED: To provide the forming technology of multi-layers wiring capable of preventing the generation of pin holes on an etching stopper film upon forming a wiring, and suppressing the dissolution of Cu (copper) in an underlying wiring layer. SOLUTION: The manufacturing method of semiconductor device comprises a process for forming a first insulating film 2 on a substrate; a process for forming the underlying wiring layer 1 so as to expose the surface in the first insulating film; a process for forming a second insulating film 10 provided with a thick film 10a having a larger film thickness compared with the periphery of the region, wherein a contact hole is formed by at least in a later process, on the first insulating film comprising the upper part of the underlying wiring layer; a process for forming a third insulating film 4 consisting of at least one layer on the second insulating film; and a process for forming the contact hole 8 in the third insulating film and the second insulating film, so that whose bottom surface arrives at the underlying wiring layer. COPYRIGHT: (C)2007,JPO&INPIT
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