| 摘要 |
PROBLEM TO BE SOLVED: To improve the property of an interconnection having a multilayer interconnection structure which uses a low dielectric constant insulation film. SOLUTION: In the method of manufacturing the semiconductor device, first, with a photo resist film 25c as a mask; a multilayer insulation film 24c consisting of a stopper insulation film 21c, the low dielectric constant insulation film 22c, and a cap insulation film 23c is dry etched including the stopper insulation film 21c to form a wiring groove 32 in the multilayer insulation film 24c. Then, after removing the photo resist film 25c by a reducing plasma treatment, an interconnection is formed in the wiring groove 32. COPYRIGHT: (C)2007,JPO&INPIT
|
