| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a high withstand voltage element and a low withstand voltage element having good characteristics while securing the high withstand voltage characteristics of the high withstand voltage element. SOLUTION: The semiconductor device having the high withstand voltage element and the low withstand voltage element includes a semiconductor substrate on which a high withstand voltage element region where the high withstand voltage element is formed and a low withstand voltage region where the low withstand voltage element is formed are defined, a first LOCOS separation structure provided in the high withstand voltage element region, and a second LOCOS separation structure provided in the low withstand voltage element region. The first LOCOS separation structure is composed of a LOCOS oxide film formed on the surface of the semiconductor substrate and a CVD oxide film formed thereon, and the second LOCOS separation structure is composed of the LOCOS oxide film. COPYRIGHT: (C)2007,JPO&INPIT
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