发明名称 |
VARIABLE RESISTANCE NON-VOLATILE MEMORY DEVICES INCLUDING A UNIFORMLY NARROW CONTACT LAYER AND METHODS OF MANUFACTURING SAME |
摘要 |
A phase changeable memory device is manufactured by forming at least one insulating layer on a substrate. A preliminary first electrode is formed on the insulating layer. The preliminary first electrode is partially etched to form a first electrode electrically connected to the substrate. After the preliminary first electrode is formed, both sidewalls of the preliminary first electrode are partially etched isotropically to form a first electrode having a uniform width and height. A phase changeable material layer pattern and a second electrode are subsequently formed on the first electrode. Related devices also are described.
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申请公布号 |
US2008029754(A1) |
申请公布日期 |
2008.02.07 |
申请号 |
US20070829556 |
申请日期 |
2007.07.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MIN CHUNG-KI;KIM TAE-EUN;YOON BYOUNG-MOON |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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