| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that at the time of side surface oxidation, polysilicon film and gate insulating film of a gate electrode are oxidized and the thickness of the gate insulating film becomes partially thick in a miniaturized semiconductor device, thus causing electrical characteristics of a MISFET to be deteriorated. SOLUTION: Side surface oxidation is carried out through plasma oxidation. The plasma oxidation shortens ingress distance of oxidized species, and controls oxidation of a polysilicon film and a gate insulating film. Controlling oxidation at the time of the side surface oxidation can control thickness of the gate insulating film to be enlarged. By controlling the enlargement of thickness of the gate insulating film, a semiconductor device can be obtained that has a MISFET with stable electrical characteristics. COPYRIGHT: (C)2008,JPO&INPIT
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