| 摘要 |
<p>PURPOSE:To easily reduce and transfer the pattern of a mask onto a matter to be formed with the pattern by irradiating the matter with an X-ray through the mask formed with the pattern by forming part of a thin single crystalline film amorphous. CONSTITUTION:A mask substrate 10 formed with an amorphous part 12 in response to a pattern on a thin single crystalline film is irradiated with an X-ray 8. Diffracted X-ray 12 is irradiated in a direction for satisfying the equation of diffraction on a single crystalline part 11. A wafer 6 to be transferred with the pattern is coated with X-ray resist 7, and when it is disposed at a position where transmitted X-ray 9 is not irradiated by directing its face to the X-ray 13, the pattern of the substrate 10 is transferred to the resist 7. Thus, the pattern of the substrate 10 is easily reduced and transferred onto the wafer 6.</p> |
