发明名称 |
Method For Reducing Crosstalk In Image Sensors Using Implant Technology |
摘要 |
The present disclosure provides an image sensor semiconductor device. A semiconductor substrate having a first-type conductivity is provided. A plurality of sensor elements is formed in the semiconductor substrate. An isolation feature is formed between the plurality of sensor elements. An ion implantation process is performed to form a doped region having the first-type conductivity substantially underlying the isolation feature using at least two different implant energy.
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申请公布号 |
US2008217719(A1) |
申请公布日期 |
2008.09.11 |
申请号 |
US20070682633 |
申请日期 |
2007.03.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIU J. C.;CHENG C. H.;TSENG CHIEN-HSIEN;HSU ALEX;SHIU FENG-JIA;WUU SHOU-GWO |
分类号 |
H01L31/00;H01L21/76 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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