TRANSISTOR HAVING FIELD PLATE

摘要

A method for forming a transistor device having a field plate includes forming a structure having a source, a drain, and a Tee gate. A photo-resist layer is formed on the structure with an opening therein only the one of two distal ends of the Tee gate. A metal is deposited over the photo-resist layer with portions of the metal being disposed on the photo-resist layer and with other portions of the metal passing through the opening onto the exposed portions of the dielectric layer and with distal end of the top of the Tee gate preventing such metal from being deposited onto portions of the dielectric layer disposed under it. The photo-resist layer is removed along with the portions of the metal deposited thereon while leaving portions of the metal from regions of the dielectric layer exposed by the opening to form the field gate.