| 摘要 |
PROBLEM TO BE SOLVED: To further improve a driving capacity without increasing an element area, with respect to a lateral MOS with a high driving capacity, wherein the gate width per unit area is increased by forming a plurality of trenches horizontally in a gate length direction. SOLUTION: In the lateral MOS with a high driving capacity, where the gate width per unit area is increased by forming a plurality of trenches 007 horizontally in a gate length direction, as shown in figures (Fig.(a) is plan view and Fig.(b) is bird's-eye view), trench patterns are laid out so that all surfaces of trench uneven portions are [100], and gate surfaces are all set to [100]. COPYRIGHT: (C)2009,JPO&INPIT
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