METHOD FOR PRODUCING SiC SUBSTRATE

摘要

A method for producing a SiC substrate with an epitaxial layer, which can prevent inventory of wafers from unduly increasing and wasteful production, is provided. This is achieved by a method for producing a SiC substrate with an epitaxial layer one at a time, the method comprising growing an epitaxial layer and growing a SiC substrate on a seed crystal substrate, and the method further comprising removing the obtained SiC substrate with the epitaxial layer from the seed crystal substrate.

主权项

1. A method for producing an SiC substrate with an epitaxial layer one at a time,
the method comprising growing an SiC epitaxial layer on a seed crystal substrate by a solution process using a Si molten liquid and growing a SiC substrate on the grown SiC epitaxial layer by a solution process, and the method further comprising removing the obtained SiC substrate with the SiC epitaxial layer from the seed crystal substrate, wherein the nitrogen density of the SiC epitaxial layer is 1017/cm3 or less, and the nitrogen density of the SiC substrate is 1018/cm3 or greater.