| 摘要 |
PURPOSE:To obviate such defects as passivation film cracking, package cracking, Al wiring shift, etc., by a method wherein a bonding layer bonding a semiconductor element onto a substrate contains a spacer comprising particles in specific diameter to be formed in the same thickness as that of the particle diameter. CONSTITUTION:The electrode of a semiconductor element 1 bonded onto a specific position of a substrate 8 through the intermediary of a bonding layer 3 is electrically connected to outer wirings 4 on the ambient parts of the semiconductor element 1. In such a semiconductor device, the bonding layer 3 contains a spacer 9 comprising spherical or bar particles of an inorganic or organic material to be formed in the same thickness as that of the particle diameter of the spacer 9. For example, the resin component of the bonding layer 3 is to be a hardened element of an epoxy resin having exceeding two epoxy groups in a molecule and a phenol resin having exceeding two phenolic hydroxyl groups in a molecule. |
