| 摘要 |
Electroluminescent semiconductor.. G6A. Witn a p-n junction for recombination energy storage in electron hole pairs, uses at least one type of a foreign donor with a wide spacing between dissociation centres, such as oxygen, and two foreign acceptor atoms with different dissociation centres spacing, relatively near the valence bond. A donor with very short distance between dissociation centres is used for doping, e.g. sulphur, selenium, tellurium, silicon etc. The semiconductor material consists of gallium phosphide, and zinc and cadmium of carbon are used as the first nd second acceptor. |
