| 摘要 |
<p>Described is a method of producing thin layer components, separated by at least one insulating layer and comprised of semiconductor material, particularly silicon. The method is characterized by the fact that an amorphous layer of insulated material is pyrolytically precipitated on a substrate wafer, comprised of monocrystalline semiconductor material. The amorphous layer is converted into a monocrystalline layer by using the monocrystalline substrate and the thus formed substrate, which has a homogeneous crystallographic orientation, is used to grow another epitactic semiconductor layer, preferably of silicon.</p> |
