INFRARED RAY EMITTING ELEMENT

摘要

In (Sb0.1As0.9) light emissive diodes and lasers are grown on Ga Sb substrates to give lattice matching. Ga Sb has higher band-gap, high refractive index therefore gives electrical, but not optical, confinement required for laser action. Both confinement types provided by sandwiching active layer between layers of (Al0.6Ga0.4)Sb. In (Sb0.1As0.9) emits at approximately 4 mu m, but emission can be shifted by increasing the proportion of In Sb and restoring the lattice match by the addition of another compound semiconductor e.g. Ga As for longer wavelength emission of In P or Al As for shorter wavelength emission.