| 摘要 |
<p>Method of manufacturing a semiconductor device comprising a body which consists of semiconductor material of the III-V compound type and which is formed by an n-type substrate (1, 2, 3, 4) and a substrate-adjoining region (5, 6) having conductivity properties differing from the substrate, zinc or cadmium being introduced at least over a part (13) of the surface (14) of the region into the region and being diffused to the substrate, characterized in that the net donor concentration in the substrate near the junction (10) between the region and the substrate is chosen to be so high that the diffusion of zinc or cadmium in the substrate near the junction (11) between the region and the substrate is retarded. </p> |
