发明名称 COBALT THIN FILM
摘要 PURPOSE:To form a Co thin film having superior corrosion resistance on the surface of a substrate film by specifying the incidence angle of Co vapor for diagonal vapor deposition and introducing oxygen gas when Co is vapor deposited on the film surface by an electron beam method. CONSTITUTION:Polyester substrate film 1 is pulled out of uncoiling roll 2, the temp. of can 3 is raised to 80 deg.C, and incidence angle theta of Co vapor for diagonal vapor deposition from Co evaporation source 5 is regulated to >=10 deg.. While introducing oxygen gas at 0.3l/min rate, Co is vapor deposited on film 1 by an electron beam method, and film 1 is coiled around coiling reel 4. The resulting Co deposited film has been oxidized fairly to the interior. When this film is dipped in an aqueous soln. of 30 deg.C contg. 0.02M/l borax and 0.1M/l boric acid to carry out a rust prevention test, the 3min value of natural electrode potential shows potential more positive than-4.0V to a satd. calomel electrode, and this film is superior to a simple Co deposited film in corrosion resistance under an atmosphere of 60 deg.C and 90% relative humidity.
申请公布号 JPS5616667(A) 申请公布日期 1981.02.17
申请号 JP19790091319 申请日期 1979.07.18
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 IMAI AKIHIRO;KUNIEDA TOSHIAKI;IIJIMA YASUO
分类号 C23C14/14;C23C14/24;C23C30/00 主分类号 C23C14/14
代理机构 代理人
主权项
地址