发明名称 SEMICONDUCTOR POWER CONVERTER
摘要 <p>PURPOSE:To attain an output currents of high quantity effectively by a method wherein an inlet for a cooling medium is formed at the semiconductor element side, the allowable temperature of junction thereof is lower, when semiconductor elements, the allowable temperature of junction thereof differs, are bridge-connected. CONSTITUTION:When the power converter is formed by bridge-connecting diodes SR-UP, SR-VP and SR-WP and thyristors THY-UN, THY-VN and THY-WN, the thyristors THY are connected and arranged to the negative pole N side and the diodes SR to the positive pole P side. When the power converter is mounted to a rectifier box 6 through cooling pieces 3, the thyristors THY, the allowable temperature of junction thereof is lower than the diodes SR, are cooled by cooling air 4 at the inlet side with a low temperature. Thus, the converter can be formed in reasonable cooling structure, and output currents can effectively be changed into currents with high output.</p>
申请公布号 JPS5631372(A) 申请公布日期 1981.03.30
申请号 JP19790107205 申请日期 1979.08.24
申请人 HITACHI LTD 发明人 MATSUZAKI TAKESHI
分类号 H02M7/04;H01L25/18;H02M7/12 主分类号 H02M7/04
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