METHOD OF PREPARATION OF MASK FOR ION BEAM LITHOGRAPHY
摘要
The invention consists of a method for the manufacture of an improved mask for ion beam lithography, comprising the steps of: (a) coating a substrate by an insulating layer; (b) opening a window on the front side of the substrate; (c) depositing an oxide layer on the front side of the substrate; (d) opening a portion of the insulating layer; (e) patterning the oxide layer by ion beam photoresist and etching techniques, and (f) removal of a portion of the substrate from the backside, thus leaving a stenciled oxide mask resting on the substrate frame. The mask produced is characterized by its durability, ensuring a membrane flatness and stiffness capable to prevent any feature displacement during its use.
申请公布号
WO9424608(A2)
申请公布日期
1994.10.27
申请号
WO1994US03628
申请日期
1994.04.04
申请人
TECHNION RESEARCH AND DEVELOPMENT FOUNDATION, LTD.;THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS;YAHALOM, JOSEPH;PECKERAR, MARTIN