发明名称 |
Preparation of adducts which may be used in the preparation of compound semiconductor materials |
摘要 |
A method of producing an adduct of an organometallic compound M1(R1)x, where M1 is a Group II or Group III metallic element and R1)x represents a plurality of organic radicals, which may be the same or different, x being an integer equal to the valency of M1, comprises electrolysing, using a sacrificial anode of the metal M1, a solution containing components A, B and C as follows: A: a magnesium compound MgR21; B: a readily ionizable support electrolyte providing relatively large anions and cations; C: a polar aprotic liquid which is a solvent for both components A and B; the metal M1 being selected from the group consisting of: indium, gallium, cadmium.
|
申请公布号 |
US4464233(A) |
申请公布日期 |
1984.08.07 |
申请号 |
US19820443733 |
申请日期 |
1982.11.22 |
申请人 |
THE SECRETARY OF STATE FOR DEFENSE IN HER BRITANNIC MAJESTY'S GOVERNMENT OF THE UNITED KINGDOM OF GREAT BRITAIN AND NORTHERN IRELAND |
发明人 |
MULLIN, JOHN B.;HOLLIDAY, ARTHUR K.;COLE-HAMILTON, DAVID J.;JONES, ANTHONY C. |
分类号 |
C25B5/00;C07F3/00;C07F3/02;C07F5/00;C25B3/12;H01L21/205;(IPC1-7):C25C1/00 |
主分类号 |
C25B5/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|