发明名称 Preparation of adducts which may be used in the preparation of compound semiconductor materials
摘要 A method of producing an adduct of an organometallic compound M1(R1)x, where M1 is a Group II or Group III metallic element and R1)x represents a plurality of organic radicals, which may be the same or different, x being an integer equal to the valency of M1, comprises electrolysing, using a sacrificial anode of the metal M1, a solution containing components A, B and C as follows: A: a magnesium compound MgR21; B: a readily ionizable support electrolyte providing relatively large anions and cations; C: a polar aprotic liquid which is a solvent for both components A and B; the metal M1 being selected from the group consisting of: indium, gallium, cadmium.
申请公布号 US4464233(A) 申请公布日期 1984.08.07
申请号 US19820443733 申请日期 1982.11.22
申请人 THE SECRETARY OF STATE FOR DEFENSE IN HER BRITANNIC MAJESTY'S GOVERNMENT OF THE UNITED KINGDOM OF GREAT BRITAIN AND NORTHERN IRELAND 发明人 MULLIN, JOHN B.;HOLLIDAY, ARTHUR K.;COLE-HAMILTON, DAVID J.;JONES, ANTHONY C.
分类号 C25B5/00;C07F3/00;C07F3/02;C07F5/00;C25B3/12;H01L21/205;(IPC1-7):C25C1/00 主分类号 C25B5/00
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