| 摘要 |
PURPOSE:To obtain a package ensuring high heat radiating efficiency for MOS element by bonding a heat sink made of a metal on a semiconductor device sealed by a transfer mold and by electrically connecting it with a part of external lead. CONSTITUTION:A cooling plate 101 made of aluminum is bonded onto a plastic base 104 formed by the transfer mold with a bonding agent having a low thermal resistance. At this time, this cooling plate is connected to a power supply terminal lead 103 of a semiconductor element. Owing to a heat sink provided, the semiconductor element becomes resistive up to the power consumption of two times or more and can obtain the effect equivalent to or more than that of the ceramic package. |
