| 摘要 |
PURPOSE:To improve the water resistance characteristic remarkably by forming a second field oxide film and an inter-aluminium layer insulating film in such a manner as covering the base layers. CONSTITUTION:A field oxide film 202 or a scribe line formed thereby and a second field oxide film 203 by PSG are formed over the scribe line 208 in such a way as covering the field oxide film 202 on a silicon substrate 201. The first aluminium wiring is formed, an inter-Al insulating film 205 is formed in such a way as covering the second field oxide film 203, the second aluminium wiring 206 is formed and moreover a passivation 207 is formed. Thereby, since the second field oxide film of PSG is perfectly covered with the inter-Al insulating film 205 and passivation 207 even at the scribe line 208, infiltration of water from the side surface of chip can be prevented perfectly. |
