| 摘要 |
PURPOSE:To bring two MOS transistors closer each other by a method wherein the second channel stopper region 18 is formed in a self-matching manner with a gate electrode 15 overlapping on the first channel stopper region. CONSTITUTION:A channel stopper region 14 is formed on the surface of a substrate 11 surrounding source and drain regions 12 and 13, and a gate electrode 15 is formed on the substrate 11 in such a manner that the region 14 and the part of the channel 17 located on the regions 12 and 13 will be overlapped in the lateral direction of each channel. Moreover, a channel stopper region 18 is formed on the surface of the substrate 11 in a self-matching manner with the gate electrode 15 overlapping on the region 14. As a result, two MOS transistors can be provided in parallel at the closely located positions in the minimum dimensions C of the region 14, thereby enabling to obtain 2a+b with the degree of integration of element higher than that of the conventional device. |
