CONFIGURATION DE CONTACT ENFOUI POUR CIRCUITS INTEGRES CMOS/SOS

摘要

A configuration for manufacturing buried contacts in complementary symmetry metal oxide semiconductor (CMOS) manufactured using silicon-on-sapphire (SOS) technology is presented. The buried contact configuration is chosen to provide contact between the epitaxial silicon layer which is grown on the sapphire substrate and the polycrystalline silicon interconnects while insuring that the epitaxial silicon layer will not be removed during the etch which defines the polycrystalline silicon interconnects.