Memory test circuit

摘要

A memory test circuit in which test data is simultaneously written into plural memory cells of a semiconductor memory device and then subsequently read from the plural memory cells to assure reliable operation of the memory device. A logical sum and a logical product are formed of the test data read out from the plural memory cells. The logical product and the logical sum are subjected to an exclusive-or operation, the result of which is indicative of whether or not the test data was correctly written into the memory cells.