Apparatus for manufacturing compound semiconductor single crystal

摘要

An apparatus has a crucible for containing a GaAs raw material melt and a B2O3 liquid encapsulating material therein, a heat generator arranged around the crucible so as to be coaxial therewith, and a heat insulator assembly arranged around the heat generator to surround the heat generator and the crucible for the purpose of manufacturing a compound semiconductor single crystal by pulling it from the raw material melt in the crucible by the LEC method. In the heat insulator assembly of the apparatus of the above construction, an upper heat insulator, arranged above the crucible and having at its center a circular hole for receiving the single crystal being pulled, comprises a plurality of radially divided sector-shaped split members. The split members are sintered bodies having aluminum nitride (AlN) as a major constituent.