| 摘要 |
PURPOSE:To provide a dielectric composition having good insulation performance, its manufacturing method, a thin film manufacturing method, and a thin film capacitor by using dielectric compound which can be given by a specific expression, and generating a denser structure at low temp. than where crystalline phase exists solely. CONSTITUTION:A thin film capacitor is obtained by using a dielectric substance compound as given by Exp. I, where X, X', X'', M are respectively Pb, Ba; Li, Na, K, Mg, Ca, Sr; La, Y; Ti, Zr, Sn, Mg, Zn, Fe, Co, Ni, Nb, Ta, W, being selected either one or more, and the total valency obtained by multiplying respective ion valencies of X, X', X'', M ions with the molar fractions is made six. Further, Z represents one or more of B, As, Bb, Si, Ge, Te, P, v and x are number of oxygen, w, y, z are mol number, a, b, c are solid number, and (d) is element-based mol number of the oxide. Therein the conditions should be met, 0.3<w<0.95, 0<y<=1, 0<=z<0.5, a/d, b/d, c/d range between 0.5 and 19, and a(1-y-z)+by+cz=1. |
