| 摘要 |
A stress sensor includes a body (100) of semiconductor material defining diaphragm (101) and diaphragm constraint portions (102), one or more stress sensing semiconductor piezoresistive domain(s) (103, 104; RA, RB, RC, RD) formed at least partly in a major surface of the diaphragm portion, and a signal processing circuit receiving the output of the domain(s) to provide an output signal in response to stress applied to the diaphragm. The circuit includes means for compensating for the effects of temperature on the stress sensor, the means including a first type of resistive domain (R1, R2) formed in said major surface of the body by doping with a semiconductor material of the same conductivity type as the first mentioned domain, the resistive domain having a temperature coefficient of resistance substantially the same as that of the piezoresistive domain, and being located so as to be substantially insensitive to the applied stress, and a second type of resistive domain (R0, R6, R7, R25, R26) supported by said body adjacent said major surface, said second type of domain having a temperature coefficient of resistance substantially less than that of the piezoresistive domain and being located so as to be substantially insensitive to the applied stress. |
