| 摘要 |
PURPOSE:To stabilize an etching speed and developing speed of a developing soln. for photoresist by charging a soln. of ethylene oxide and an aq. soln. of trimethylamine contg. >=1 mole trimethylamine per 1 mole ethylene oxide to a reaction vessel at a time, mixing both solns. quickly so as to attain a uniformly dispersed state, and allowing the ethylene oxide to react with trimethylamine. CONSTITUTION:For example, an aq. soln. contg. 17.2wt.% trimethylamine and an aq. soln. contg. 11.6wt.% ethylene oxide are charged to a reaction vessel installed with a stirrer having a baffle board in a proportion of 1.10 mole trimethylamine to 1 mole ethylene oxide, and trimethylamine is allowed to react with ethylene oxide by mixing both solns. In this case, both solns. should be charged to the reaction vessel at a time, and should be mixed so as to attain quickly a uniformly dispersed state. Namely, it is preferred that the time for mixing is within 1/5 as compared to the time until the temp. of the mixture attains the highest temp. of the reaction, and the time is preferred to be as short as possible. Thus, a developing soln. for photoresist having a stable etching speed and developing speed is obtd. |
