| 摘要 |
PURPOSE:To enable the characteristics of a light emitting layer to be satisfactorily displayed by a method wherein an amorphous carbon film formed by P-CVD (Plasma-Chemical Vapor Deposition) process using ethylene gas is used as the light emitting layer while amorphous silicon carbide films formed by the P-CVD process are used as hole and electron injected layers. CONSTITUTION:An amorphous carbon base film formed by plasma chemical process using low pressure hydrogen gas and ethylene gas as well as very small quantity of hydrosilicon gas as reactive gas is used as a light emitting layer 400 while amorphous silicon carbide films formed by the plasma chemical deposition process polymerizing a decomposed gas by glow-discharging low pressure reactive gas containing a hydrocarbon gas, a hydrosilicon gas and an impurity gas in a vacuum vessel are used as respective injected layers 300 and 500 with hole and electron. Through these procedures, the light emitting characteristics of the light emitting layer 400 are improved and furthermore satisfactorily displayed. |
