| 摘要 |
PURPOSE:To oscillate a semiconductor laser with a low-threshold current by junctioning a p-type group II-III semiconductor and a p-type group III-V semiconductor substrate through a strip-shaped n-type semiconductor film divided into sections recessed in cross section. CONSTITUTION:A p-type GaAs film 2, a p-type GaInP film 3, and an n-type GaAs film 4 are stacked in order on a p-type GaAs substrate 1. A stripe pattern 5mum width (not more than 1mum and not less than 50mum) and 30mm long is formed by applying photoresist on the n-type GaAs film 4 on a group III-V semiconductor substrate. And, the n-type GaAs film 4 is removed, and a recess 10 in the shape of a stripe and without an n-type GaAs film 4 is formed. The group II-VI semiconductor film epitaxially grown on the recess 20 is bent with the recess. Since an active layer 7 too is bent with the recess 20, the laser beam generated in the active layer 7 on the recess 20 is confined sideways. That is, the refractive index-waveguide structure is achieved. |
