| 摘要 |
PURPOSE:To vary and angle of deflection speedily at random without requiring a high voltage by deflecting beam light according the level of an electrode applied voltage while the beam light propagates in an epitaxial layer. CONSTITUTION:For example, a P type GaAs epitaxial layer 2 which has positive holes at lower density than conduction electron density is grown on an N type GaAs substrate 1 which has conduction electrons at the 1st density. Then, electrodes A1 and A2, and B are provided at part of the layer 2 and the reverse surface of the substrate 1. Consequently, the layer 2 has a greater refractive index than the substrate 1 against to beam light which has specific wavelength and a specific diameter when incident to a specific incidence point. When no voltage is applied between the electrodes of the deflector, the incident light beam propagates straight; and the propagating light beam is deflected toward the electrode A2 when a forward bias voltage is applied between the electrodes A1 and B or toward the electrode A1 when the forward bias voltage is applied between the electrodes A1 and B. |
