| 发明名称 |
Non-monocrystalline silicon carbide semiconductor and semiconductor device employing the same |
| 摘要 |
A non-monocrystalline silicon carbide semiconductor comprises carbon atoms, silicon atoms, and at least one of hydrogen atoms and halogen atoms, the non-monocrystalline silicon carbide semiconductor having therein microvoids with an average radius of not more than 3.5 ANGSTROM at a microvoid density of not more than 1x1019 cm-3.
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| 申请公布号 |
US5510631(A) |
申请公布日期 |
1996.04.23 |
| 申请号 |
US19940289258 |
申请日期 |
1994.08.11 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SAITO, KEISHI;AOIKE, TATSUYUKI;KARIYA, TOSHIMITSU;KODA, YUZO |
| 分类号 |
H01L21/205;H01L29/78;H01L29/786;H01L31/04;H01L31/08;H01L31/10;H01L31/20;(IPC1-7):H01L31/031;H01L29/76;H01L31/06 |
主分类号 |
H01L21/205 |
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