Current limiting component and method for making the same

摘要

The component includes a semiconductor trench or bar (12) with three junctions (9,10,11) and four regions (5-8). The bar has a length or thickness of 160 to 700 mu m and a basic dopant density of 10<13> to 10<15> atoms/cm<3>. The wafer or bar (12) of e.g. Si has two p-type regions (5,7) alternating with two n-type regions (6,8) between its anode (3) and cathode (4). The outermost regions (5,8) have shallow doping with more than 10<18> atoms/cm<3>. The inner regions are more deeply doped e.g. from 5 to 90 mu m, with at least 10<15> atoms/cm<3> (6) and 10<17> to 10<19> atoms/cm<3> respectively.